<$etni~l,onduetoi lpioaueti, one.. 20 stern ave. springfield, new jersey 07081 u.s.a. vn35ak series 1.2 amperes 35-90 volts telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 held effect power transistor applications ? high current analog switches ? rf power amplifiers ? laser diode pulsers ? line drivers ? logic buffers ? pulse amplifiers features high speed, high current switching high gain-bandwidth product inherently temperature stable extended safe operating area simple dc biasing requires almost zero current drive maximum ratings (ta = 25 c) (unless otherwise specified) n-channel case style to-205ad(to-39) dimension* are in inchh and (millimetcrs) 0.350-0.370 (8.mo-9.3w) 7 i oj16-0.338 oittf^ ^d.ff? o.oim.oi? jl .,?.. drain gate source rating drain-source voltage drain-gate voltage, rgs = imcl continuous drain current @ ta * 25 c peak drain current111 gate-source voltage total power dissipation @ ta = 25 c derate above 25 c operating and storage junction temperature range symbol vdss vdgr id idm vgs pd tj. tstq vn35ak 35 35 1.2 3.0 30 6.25 50 -55 to 150 vn66ak/67ak 60 60 1.2 3.0 30 6.25 50 -55 to 150 VN98AK/99ak 90 90 1.2 3.0 30 6.25 50 -55 to 150 units volts volts a a volts watts mw/c c thermal characteristics thermal resistance, junction to ambient maximum lead temperature for soldering purposes: 1/16" from case for 10 seconds raja tl 20 300 20 300 20 300 c/w ?c (1) repetitive rating: puiaa width limited bv max. junction temperature. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (ta = 25 c) (unless otherwise specified) characteristic symbol min typ max unit off characteristics drain-source breakdown voltage vn35ak (vgs = 0v, in = 10 //a) vn66/67ak vn98/99ak zero gate voltage drain current (vds = max rating, vgs = 0v) (vds = max rating, x 0.8, vqs = 0v, ta = 125c) gate-source leakage current (vgs=15v,vds = ov) (vgs = 15v, vds = ov - ta = 125 c) bvdss loss igss 35 60 90 ? ?,.. ? ? ? ^~ 10 500 100 500 volts m na na on characteristics" gate threshold voltage (vds = vgs, id = 1 ma) drain-source saturation voltage vn66ak (vgs = 10v, id = 1.0a) VN98AK drain-source saturation voltage vn35ak (vqs = 10v, id = 1.0a) vn67ak vn99ak on-state drain current (vds = 25v. vgs = 10v) forward transconductance (vds = 24v, id = 0.5a) vgs(th) vds(on) vds(on) 'd(on) 9fs 0.8 __ _ 1.0 ,170 ? ? e ? ? 2.0 3.0 4.0 2.5 3.5 4.5 ? ? volts volts volts amps mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance vqs = ov vds = 24v f=1 mhz ciss coss crss ? ? ?? ? ? ? 50 40 10 pf pf pf switching characteristics* turn-on delay time turn-off delay time see switching times waveform below ld(on) td(off) ? ? 3 3 8 8 ns ns ?pulse test: pulse width < 300 us. duty cycle < 2% input output 90% switching time test waveforms
|
